April 26, 2006

On Monday a jury in the U.S. District Court for the Northern District of California in San Jose awarded $306.9 million in damages to Rambus Inc. after finding that Hynix Semiconductor Inc. Communications Corp. infringed ten patent claims of four Rambus patents. This litigation began when Hynix sued Rambus in 2000 alleging that 11 Rambus patents were invalid or not infringed by Hynix (seeking declaratory judgment), and Rambus countered, eventually having 59 claims in 14 patents involved in the suit. The patents involve dynamic random access memory (DRAM) technology, commonly used in personal computer memory chips. Rambus has three related patent disputes pending against Samsung Electronics Co., Micron Technology Inc., and Nanya Technology Corp., regarding its patented memory technologies. Judge Ronald Whyte had earlier found two Rambus patent claims to be infringed (summary judgment), and the federal jury found eight other Rambus patent claims to be infringed by Hynix, resulting in $276.4 million in damages for DDR SDRAM memory and $30.5 for general SDRAM memory sold by Hynix.

Hynix v. Rambus Jury Verdict Form: LINK
Rambus Press Release: LINK
Bloomberg.com News Article: LINK


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